Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects
نویسندگان
چکیده
منابع مشابه
High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects
The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms of zero standby power, switching power efficien...
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ژورنال
عنوان ژورنال: Journal of Low Power Electronics and Applications
سال: 2019
ISSN: 2079-9268
DOI: 10.3390/jlpea9020015